| PART |
Description |
Maker |
| BD241B BD241 BD241A |
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS npn型秀康外延基地功率晶体管
|
Rectron Semiconductor
MICRO-ELECTRONICS[Micro Electronics]
|
| BD20112 BD203 |
SILCON EPITAXIAL-BASE POWER TRANSISTORS
SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductor
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILCON BRIDGE RECTIFIER
|
Dc Components
|
| BDX18N |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
New Jersey Semi-Conductor P...
|
| 2N4901 2N4902 2N4903 |
PNP SILICON TRANSISTORS, EPITAXIAL BASE
|
Comset Semiconductor
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
List of Unclassifed Manufacturers
ETC
Comset Semiconductors
|
| BDX18 BDX18N |
PNP SILICON TRANSISTOR EPITAXIAL BASE
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC
Comset Semiconductors
|
| 2N6290 2N6291 2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp...
|
| BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V.
|
General Electric Solid State
|
